IndiumV3, Main, Repository, bibRecord, 001022

Condenson state and its effects on thermoelectric properties in In4Se3

Identifieur interne : 001022 ( Main/Repository ); précédent : 001021; suivant : 001023

Condenson state and its effects on thermoelectric properties in In4Se3

Auteurs : RBID : Pascal:13-0320205

Descripteurs français

Pascal (Inist)
- Pouvoir thermoélectrique, Etat localisé, Conductivité thermique réseau, Energie liaison, Matériau dopé, Séléniure d'indium, Composé binaire, Propriété thermoélectrique, Addition étain, In4Se3, 7220P.

English descriptors

KwdEn :
- Binary compounds, Binding energy, Doped materials, Indium selenides, Lattice thermal conductivity, Localized states, Thermoelectric power, Thermoelectric properties, Tin additions.

Abstract

The thermoelectric properties of In₄Se₃ compounds were investigated, and their unique charge and thermal transport behaviours were interpreted in terms of condenson state for the first time. The effects of Sn-doping both on the carrier localization and lattice thermal conductivity were consistent with the proposed condenson model. Some important physical properties, such as the band gap energy of In₄Se₃ and the binding energy of the condenson state, are also presented.

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Pascal:13-0320205

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Condenson state and its effects on thermoelectric properties in In<sub>4</sub>
Se<sub>3</sub>
</title>
<author><name>YOUNG SOO LIM</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong</s1>
<s2>Geumcheon-gu, Seoul 153-801</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Geumcheon-gu, Seoul 153-801</wicri:noRegion>
</affiliation>
</author>
<author><name>MAHN JEONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong</s1>
<s2>Geumcheon-gu, Seoul 153-801</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Geumcheon-gu, Seoul 153-801</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong</s1>
<s2>Seongbuk-gu, Seoul 136-701</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Seongbuk-gu, Seoul 136-701</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Seo, Won Seon" uniqKey="Seo W">Won-Seon Seo</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong</s1>
<s2>Geumcheon-gu, Seoul 153-801</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Geumcheon-gu, Seoul 153-801</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lee, Jong Heun" uniqKey="Lee J">Jong-Heun Lee</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong</s1>
<s2>Seongbuk-gu, Seoul 136-701</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Seongbuk-gu, Seoul 136-701</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Park, Cheol Hee" uniqKey="Park C">Cheol-Hee Park</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Corporate R&D, LG Chem/Research Park, 104-1 Moonji-dong</s1>
<s2>Yuseong-gu, Daejeon 305-380</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Corée du Sud</country>
<wicri:noRegion>Yuseong-gu, Daejeon 305-380</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sznajder, Malgorzata" uniqKey="Sznajder M">Malgorzata Sznajder</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Institute of Physics, University of Rzeszow, Rejtana 16a</s1>
<s2>35-310 Rzeszow</s2>
<s3>POL</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Pologne</country>
<wicri:noRegion>35-310 Rzeszow</wicri:noRegion>
</affiliation>
</author>
<author><name>LYUBOV YU KHARKHALIS</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St.</s1>
<s2>88000 Uzhgorod</s2>
<s3>UKR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>88000 Uzhgorod</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bercha, Dariya M" uniqKey="Bercha D">Dariya M. Bercha</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St.</s1>
<s2>88000 Uzhgorod</s2>
<s3>UKR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>Ukraine</country>
<wicri:noRegion>88000 Uzhgorod</wicri:noRegion>
</affiliation>
</author>
<author><name>JIHUI YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Materials Science and Engineering, University of Washington</s1>
<s2>Seattle, WA 98195-2180</s2>
<s3>USA</s3>
<sZ>9 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Seattle, WA 98195-2180</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0320205</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0320205 INIST</idno>
<idno type="RBID">Pascal:13-0320205</idno>
<idno type="wicri:Area/Main/Corpus">000677</idno>
<idno type="wicri:Area/Main/Repository">001022</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-3727</idno>
<title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title>
<title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Binding energy</term>
<term>Doped materials</term>
<term>Indium selenides</term>
<term>Lattice thermal conductivity</term>
<term>Localized states</term>
<term>Thermoelectric power</term>
<term>Thermoelectric properties</term>
<term>Tin additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Pouvoir thermoélectrique</term>
<term>Etat localisé</term>
<term>Conductivité thermique réseau</term>
<term>Energie liaison</term>
<term>Matériau dopé</term>
<term>Séléniure d'indium</term>
<term>Composé binaire</term>
<term>Propriété thermoélectrique</term>
<term>Addition étain</term>
<term>In4Se3</term>
<term>7220P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The thermoelectric properties of In<sub>4</sub>
Se<sub>3</sub>
 compounds were investigated, and their unique charge and thermal transport behaviours were interpreted in terms of condenson state for the first time. The effects of Sn-doping both on the carrier localization and lattice thermal conductivity were consistent with the proposed condenson model. Some important physical properties, such as the band gap energy of In<sub>4</sub>
Se<sub>3</sub>
 and the binding energy of the condenson state, are also presented.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0>
</fA01>
<fA02 i1="01"><s0>JPAPBE</s0>
</fA02>
<fA03 i2="1"><s0>J. phys., D. Appl. phys. : (Print)</s0>
</fA03>
<fA05><s2>46</s2>
</fA05>
<fA06><s2>27</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Condenson state and its effects on thermoelectric properties in In<sub>4</sub>
Se<sub>3</sub>
</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>YOUNG SOO LIM</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MAHN JEONG</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SEO (Won-Seon)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>LEE (Jong-Heun)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>PARK (Cheol-Hee)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>SZNAJDER (Malgorzata)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>LYUBOV YU KHARKHALIS</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>BERCHA (Dariya M.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>JIHUI YANG</s1>
</fA11>
<fA14 i1="01"><s1>Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong</s1>
<s2>Geumcheon-gu, Seoul 153-801</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Materials Science and Engineering, Korea University, 5-1 Anam-dong</s1>
<s2>Seongbuk-gu, Seoul 136-701</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Corporate R&D, LG Chem/Research Park, 104-1 Moonji-dong</s1>
<s2>Yuseong-gu, Daejeon 305-380</s2>
<s3>KOR</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Institute of Physics, University of Rzeszow, Rejtana 16a</s1>
<s2>35-310 Rzeszow</s2>
<s3>POL</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>Institute of Physics and Chemistry of Solid State, Uzhgorod National University, 54 Voloshin St.</s1>
<s2>88000 Uzhgorod</s2>
<s3>UKR</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="06"><s1>Department of Materials Science and Engineering, University of Washington</s1>
<s2>Seattle, WA 98195-2180</s2>
<s3>USA</s3>
<sZ>9 aut.</sZ>
</fA14>
<fA20><s2>275304.1-275304.5</s2>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>5841</s2>
<s5>354000503865240130</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>22 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0320205</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The thermoelectric properties of In<sub>4</sub>
Se<sub>3</sub>
 compounds were investigated, and their unique charge and thermal transport behaviours were interpreted in terms of condenson state for the first time. The effects of Sn-doping both on the carrier localization and lattice thermal conductivity were consistent with the proposed condenson model. Some important physical properties, such as the band gap energy of In<sub>4</sub>
Se<sub>3</sub>
 and the binding energy of the condenson state, are also presented.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70B20P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Pouvoir thermoélectrique</s0>
<s5>41</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Thermoelectric power</s0>
<s5>41</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Etat localisé</s0>
<s5>43</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Localized states</s0>
<s5>43</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Conductivité thermique réseau</s0>
<s5>44</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Lattice thermal conductivity</s0>
<s5>44</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Conductividad térmica red</s0>
<s5>44</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Energie liaison</s0>
<s5>46</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Binding energy</s0>
<s5>46</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>50</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>57</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>57</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>61</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>61</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Propriété thermoélectrique</s0>
<s5>62</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Thermoelectric properties</s0>
<s5>62</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Addition étain</s0>
<s5>63</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Tin additions</s0>
<s5>63</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>In4Se3</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>7220P</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fN21><s1>301</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Condenson state and its effects on thermoelectric properties in In4Se3

Condenson state and its effects on thermoelectric properties in In4Se3

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri